1 ELM34600AA-N complementary mosfet ELM34600AA-N uses advanced trench technology to provide excellent rds(on) and low gate charge. n-channel p-channel ? vds=30v vds=-30v ? id=7a id=-5a ? rds(on) < 27.5m(vgs=10v) rds(on) < 45m(vgs=-10v) ? rds(on) < 40.0m(vgs=4.5v) rds(on) < 80m(vgs=-4.5v) parameter symbol n-ch (max.) p-ch (max.) unit note drain - source voltage vds 30 -30 v gate - source voltage vgs 20 20 v continuous drain current ta=25c id 7 -5 a ta=70c 6 -4 pulsed drain current idm 20 -20 a 3 power dissipation ta=25c pd 2.0 2.0 w ta=70c 1.3 1.3 junction and storage temperature range tj,tstg - 55 to 150 - 55 to 150 c s 2 g 2 d 2 s 1 g 1 d 1 general description features maximum absolute ratings thermal characteristics circuit ? n-ch ? p-ch parameter symbol device typ. max. unit note maximum junction - to - ambient rja n-ch 62.5 c /w maximum junction - to - ambient rja p-ch 62.5 c /w 7 - pin configuration sop-8(top view) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8
2 electrical characteristics (n-ch) ta=25 c parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs = 0v 1 a vds=20v, vgs = 0v, tj=55c 10 gate - body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250a 1.0 1.5 2.5 v on state drain current id(on) vgs=10v, vds=5v 20 a 1 static drain - source on - resistance rds(on) vgs=10v, id= 7a 20.5 27.5 m 1 vgs = 4.5v, id = 6a 30.0 40.0 forward transconductance gfs vds = 5v, id = 7a 16 s 1 diode forward voltage vsd if = 1a, vgs=0v 1 v 1 max.body - diode continuous current is 1.3 a pulsed current ism 2.6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=15v, f=1mhz 680 pf output capacitance coss 105 pf reverse transfer capacitance crss 75 pf switching parameters total gate charge qg vgs=10v, vds=15v, id=7a 14.0 nc 2 gate - source charge qgs 1.9 nc 2 gate - drain charge qgd 3.3 nc 2 turn - on delay time td(on) vgs=10v, vds=10v, id1a rgen=3 4.6 7.0 ns 2 turn - on rise time tr 4.0 6.0 ns 2 turn - off delay time td(off) 20.0 30.0 ns 2 turn - off fall time tf 5.0 8.0 ns 2 complementary mosfet ELM34600AA-N note : 1. pulse test : pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. 7 -
3 complementary mosfet ELM34600AA-N typical electrical and thermal characteristics (n-ch) 7 - 4 dec-19-2005 n- & p-channel enhancement mode field effect transistor p5003qvg sop-8 lead-free niko-sem n-channel body diode forward voltage variation with source current and temperature 25 c t = 125 c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4
4 complementary mosfet ELM34600AA-N 7 - 5 dec-19-2005 n- & p-channel enhancement mode field effect transistor p5003qvg sop-8 lead-free niko-sem
5 ta=25 c complementary mosfet ELM34600AA-N 7 - electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id= - 250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v - 1 a vds=-20v, vgs= 0v, tj=55c -10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id= - 250a -1.0 -1.5 -2.5 v on state drain current id(on) vgs= - 10v, vds= - 5v -20 a 1 static drain - source on - resistance rds(on) vgs=-10v, id=-5 a 37.5 45.0 m 1 vgs =- 4.5v, id =- 4a 62.0 80.0 forward transconductance gfs vds =- 5v, id =-5 a 13 s 1 diode forward voltage vsd if =- 1a, vgs=0v -1 v 1 max.body - diode continuous current is -1.3 a pulsed current ism -2.6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 780 pf output capacitance coss 145 pf reverse transfer capacitance crss 79 pf switching parameters total gate charge qg vgs=-10v, vds=-15v id=-5a 15.1 nc 2 gate-source charge qgs 2.1 nc 2 gate-drain charge qgd 4.0 nc 2 turn - on delay time td(on) vgs=-10v, vds=-10v id-1a, rgen=3 7.7 11.5 ns 2 turn - on rise time tr 5.7 8.5 ns 2 turn - off delay time td(off) 20.0 30.0 ns 2 turn - off fall time tf 9.5 14.0 ns 2 note : 1. pulse test : pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature.
6 complementary mosfet ELM34600AA-N 7 - typical electrical and thermal characteristics (p-ch) 6 dec-19-2005 n- & p-channel enhancement mode field effect transistor p5003qvg sop-8 lead-free niko-sem p-channel body diode forward voltage variation wi th source current and temperature 25 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 gs a t = 125 c 1.0 0.8 1.2 -55c 1.4
7 complementary mosfet ELM34600AA-N 7 - 7 dec-19-2005 n- & p-channel enhancement mode field effect transistor p5003qvg sop-8 lead-free niko-sem gate charge characteristics -v gs - gate-to-source voltage(v) qg -gate charge(nc) -15v -10v v ds = -5v i d = -5a 8 6 4 2 0 10 20 15 10 5 0 f=1 mhz v gs =0v capacitance(pf) capacitance characteristics ciss coss crss -v ds ,drain-to-source voltage(v) 1200 1000 800 600 400 200 0 20 15 10 5 0
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